.-- = --- =_ ?e an amp company radar pulsed power transistor, 13ow, ioops pulse, 10% duty 2.7 - 2.9 ghz PH2729430M features npn silicon microwave power transistor common base configuration broadband class c operation new power dense interdigitated geometry diffused emitter ballasting resistors gold metalization system internal input and output impedance matching hermetic metauceramic package absolute maximum ratings at 25c parameter symbol rating units collector-emittervoltage v es 63 v emitter-base voltage i vm i 3.0 i v i collector current (peak) ?c 12.5 a total power dissipation p tplt 575 w 1 junctiontemperature 1 t, 1 200 1 ?c i storagetemperature 1 t,,, 1 -65 to+200 1 ?c 1 electrical characteristics at 25c ,l??-.?.? :2.54=.25) t <1.52-'.cs) inchcs 5.005? l&et& 1 svmbol 1 min 1 max 1 units 1 test conditions collector-emitter breakdown voltage collector-emitter leakage current thermal resistance outout power bv,,, 65 - v i,=40 ma i ces 7.5 ma vce=36 v r wjci 0.3 ?ww v,,=36 v, p,n=26 w, f=2.7,2.9 ghz p ^,_ 130 - w v-,=36 v, p,,=26 w, f=2.7.2.9 ghz r~ power gain collector efficiency ??i gp llr -- ,. 7.0 - db v,,=36 v, p,,=26 w, f=2.7,2.9 ghz 40 - % v,,=36 v, p,,=26 w, f=2.7,2.9 ghr input return loss overdrive stabilitv , rl 6 - db vcc=36 v, p,,=26 w, f=2.7,2.9 ghz od-s - 1.0 db vp,=36 v, p,,=26 w, f=2.7.2.9 ghz load mismatch tolerance load mismatch stablility vswr-t - vswr-s - 3:l - 2:l - v,,=36 v, p,,=26 w, f=2.7.2.9 ghz vccs36 v, p,,=26 w, f=2.7,2.9 ghz this data sheet contains typical electrical specifications which may change prior to final introduction 9-12 m/a-com, inc. north america: tel. (800) 366-2266 . asia/pacific: tel. +81 (03) 3226-1671 n europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020
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